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october 2016 docid025836 rev 6 1 / 16 this is information on a product in full production. www.st.com STL62P3LLH6 p - channel - 30 v, 9 m typ., - 62 a stripfet? h6 power mosfet in a powerflat 5x6 package datasheet - production data figure 1: internal schematic diagram features order code v ds r ds(on) max i d STL62P3LLH6 - 30 v 10.5 m? - 62 a ? very low on-resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p-channel power mosfet developed using the stripfet? h6 technology, with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code m arking package pack ing STL62P3LLH6 62p3llh6 powerflat tm 5x6 tape and reel .
contents STL62P3LLH6 2 / 16 docid025836 rev 6 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 6 3 test circuits ..................................................................................... 9 4 package information ..................................................................... 10 4.1 powerflat 5x6 type r package information .................................. 11 5 packing information ...................................................................... 13 6 revision history ............................................................................ 15
STL62P3LLH6 electrical ratings docid025836 rev 6 3 / 16 1 electrical ratings table 3: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 30 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t c = 25 c - 62 a i d (1) drain current (continuous) at t c = 100 c - 44 a i d (2) drain current (continuous) at t pcb = 25 c - 14 a i d (2) drain current (continuous) at t pcb = 100 c - 9.5 a i d (1) (2) drain current (pulsed) - 248 a i dm (2) (3) drain current (pulsed) - 56 a p tot (1) total dissipation at t c = 25 c 100 w p tot (2) total dissipation at t pcb = 25 c 4.8 w t stg storage temperature range - 55 to 175 c t j operating junction temperature range notes: (1) the value is rated according to r thj - c . (2) this value is rated according to r thj - pcb . (3) pulse width is limited by safe operating area. table 4: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 1.5 c/w r thj - pcb (1) thermal resistance junction - pcb, single operation 31.3 c/w notes: (1) when mounted on fr - 4 board of 1inch2, 2oz cu
electrical characteristics STL62P3LLH6 4 / 16 docid025836 rev 6 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = - 250 a - 30 v i dss zero gate voltage drain current v gs = 0 v, v ds = - 30 v - 1 a v gs = 0 v, v ds = - 30 v, t c = 125 c (1) - 10 a i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = - 250 a - 1 v r ds(on) static drain - source on - resistance v gs = - 10 v, i d = - 7 a 9 10.5 m? v gs = - 4.5 v, i d = - 7 a 13 16 m? notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = - 25 v, f = 1 mhz, v gs = 0 v - 3350 - pf c oss output capacitance - 414 - pf c rss reverse transfer capacitance - 287 - pf q g total gate charge v dd = - 15 v, i d = - 14 a, v gs = - 4.5 v (see figure 14: "gate charge test circuit" ) - 33 - nc q gs gate - source charge - 14 - nc q gd gate - drain charge - 11 - nc table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = - 15 v, i d = - 7 a, r g = 4.7 , v gs = - 10 v (see figure 13: "switching times test circuit for resistive load" ) - 12.8 - ns t r rise time - 112 - ns t d(off) turn - off delay time - 61 - ns t f fall time - 45 - ns
STL62P3LLH6 electrical characteristics docid025836 rev 6 5 / 16 table 8: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = - 7 a, v gs = 0 v - - 1.1 v t rr reverse recovery time i sd = - 24 a, di/dt = 100 a/s v dd = - 16 v, t j =150 c (see figure 15: "source - drain diode forward characteristics" ) - 25.2 ns q rr reverse recovery charge - 17.4 nc i rrm reverse recovery current - 1.4 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STL62P3LLH6 6 / 16 docid025836 rev 6 2.1 electrical characteristics (curves) note: for the p - channel power mosfet, current and voltage polarities are reversed. figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics gipg010920141456 rv i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100 s 10 ms 1ms 0.1 tj=175c tc=25c single pulse 100 0.01 gipg030920141359mt 0.05 0.02 0.01 0.1 0.2 gipg280820141409mt i d 150 50 0 0 2 v ds (v) 4 (a) 6 7v v gs = 9,10v 100 200 8 3v 5v 8v 6v 4v
STL62P3LLH6 electrical characteristics docid025836 rev 6 7 / 16 figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature gipg030920141408m t v gs 6 4 2 0 0 40 q g (nc) (v) 8 60 10 v dd =15v i d =14a 12 20 gipg020920141051mt r ds(on) 8.70 8.60 8.50 0 4 i d (a) (m ) 2 6 8.80 v gs =10v 8 10 8.90 9.00 9.10 14 12 9.20 9.30 9.40 gipg020920141 145m t v gs(th) 0.7 0.5 0.4 -75 t j (c) (norm) 1.1 75 25 i d =250 a -25 125 175 0.6 0.8 0.9 1 gipg020920141 154m t r ds(on) 0.8 0.4 -75 25 t j (c) (norm) -25 75 125 0.6 1 1.2 1.4 v gs =10v 1.6 175 gipg020920141202mt v (br)dss -75 t j (c) (norm) -25 75 25 125 0.92 0.94 1.02 i d =1m a 1.04 1.08 175 0.96 0.98 1 1.06
electrical characteristics STL62P3LLH6 8 / 16 docid025836 rev 6 figure 12 : source - drain diode forward characteristics gipg020920141229mt v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.5 0.6 t j =-55c t j =175c t j =25c 0.7 0.8 0.9 1 12 14 16 18
STL62P3LLH6 test circuits docid025836 rev 6 9 / 16 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : source - drain diode forward characteristics
package information STL62P3LLH6 10 / 16 docid025836 rev 6 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STL62P3LLH6 package i nformation docid025836 rev 6 11 / 16 4.1 powerflat 5x6 type r package information figure 16 : powerflat? 5x6 type r package outline a0er_8231817_rev14
package information STL62P3LLH6 12 / 16 docid025836 rev 6 table 9: powerflat? 5x6 type r mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 c 5.80 6.00 6.20 d 5.00 5.20 5.40 d2 4.15 4.45 d3 4.05 4.20 4.35 d4 4.80 5.00 5.20 d5 0.25 0.40 0.55 d6 0.15 0.30 0.45 e 1.27 e 5.95 6.15 6.35 e2 3.50 3.70 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28 e6 0.20 0.325 0.45 e7 0.75 0.90 1.05 k 1.275 1.575 l 0.60 0.80 l1 0.05 0.15 0.25 0 12 figure 17 : powerflat? 5x6 recommended footprint (dimensions are in mm) 8231817_footprint_simp_rev_14
STL62P3LLH6 packing information docid025836 rev 6 13 / 16 5 packing information figure 18 : powerflat? 5x6 tape (dimensions are in mm) figure 19 : powerflat? 5x6 package orientation in carrier tape
packing information STL62P3LLH6 14 / 16 docid025836 rev 6 fi gure 20 : powerflat? 5x6 reel
STL62P3LLH6 revision history docid025836 rev 6 15 / 16 6 revision history table 10: document revision history date revision changes 30 - may - 2014 1 first release. 05 - sep - 2014 2 updated the title, the features and the description in cover page. updated section 7: "electrical characteristics ". minor text changes. 11 - sep - 2014 3 updated figure 6: "gate charge vs gate - source voltage ". minor text changes. 16 - dec - 2014 4 document status promoted from preliminary to production data. 07 - apr - 2015 5 updated section 7.1: "electrical characteristics (curves)" and section 9.1: "powerflat 5x6 type r package information " 2 0 - o ct - 2016 6 updated figure 2: "safe operating area" . minor text changes.
STL62P3LLH6 16 / 16 docid025836 rev 6 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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